1/7 advance data november, 19 2002 SD57030-01 rf power transistors the ldmost family n-channel enhancement-mode lateral mosfets ? excellent thermal stability ? common source configuration ? p out = 30 w with 13 db gain @ 945 mhz ? beo free package description the SD57030-01 is a common source n-channel enhancement-mode lateral field-effect rf power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 ghz. the SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28 v. it is ideal for base station applications requiring high linearity. absolute maximum ratings (t case = 25 c) symbol parameter value unit v (br)dss drain-source voltage 65 v v dgr drain-gate voltage (r gs = 1 m w) 65 v v gs gate-source voltage + 20 v i d drain current 4 a p diss power dissipation (@ tc = 70 c) 74 w tj max. operating junction temperature 200 c t stg storage temperature -65 to + 200 c thermal data r th(j-c) junction -case thermal resistance 1.75 c/w m250 epoxy sealed order code SD57030-01 branding tSD57030-01 pin connection 1 3 2 1. drain 2. gate 3. source
SD57030-01 2/7 electrical specification (t case = 25 c) static dynamic symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v i ds = 10 ma 65 v i dss v gs = 0 v v ds = 28 v 1 m a i gss v gs = 20 v v ds = 0 v 1 m a v gs(q) v ds = 28 v i d = 50 ma 2.0 5.0 v v ds(on) v gs = 10 v i d = 3 a 1.3 v g fs v ds = 10 v i d = 3 a 1.8 mho c iss *v gs = 0 v v ds = 28 v f = 1 mhz 58 pf c oss v gs = 0 v v ds = 28 v f = 1 mhz 34 pf c rss v gs = 0 v v ds = 28 v f = 1 mhz 2.7 pf symbol test conditions min. typ. max. unit p out v dd = 28 v i dq = 50 ma f = 945 mhz 30 w g ps v dd = 28 v i dq = 50 ma p out = 30 w f = 945 mhz 13 15 db h d v dd = 28 v i dq = 50 ma p out = 30 w f = 945 mhz 50 60 % load mismatch v dd = 28 v i dq = 50 ma p out = 28 w f = 945 mhz all phase angles 10:1 vswr ref. 7143417b
3/7 SD57030-01 output power vs. input power 0 0.2 0.4 0.6 0.8 1 1.2 1.4 pin, input pow er (w ) 0 10 20 30 40 pout, output power (w) f= 945 mhz vdd= 28 v idq= 50 ma typical performance (cw) power gain and efficiency vs. output power 0 5 10 15 20 25 30 35 40 pout, output power (w) 0 3 6 9 12 15 18 21 gp, power gain (db) 0 10 20 30 40 50 60 70 nd, drain efficiency (%) f= 945 mhz vdd= 28 v idq= 50 ma gain eff output power vs. gate source voltage -5 -4 -3 -2 -1 0 1 2 3 4 vgs, gate-source voltage (v) 0 5 10 15 20 25 30 35 pout, output power (w) f= 945 mhz vdd= 28 v idq= 50 ma output power vs. supply voltage 8 121620242832 vdd, supply voltage (v) 0 5 10 15 20 25 30 35 pout, output power (w) f= 945 mhz idq= 50 ma pin= .24 w pin= .84 w pin= .47 w
SD57030-01 4/7 test circuit schematic test circuit component part list component description c19 200 m f / 63v alluminium electrolytic radial lead capacitor c18, c14 0.1 m f / 500v surface mount ceramic chip capacitor c17 100 pf atc 100b surface mount ceramic chip capacitor c16, c12, c11,c1 47 pf atc 100b surface mount ceramic chip capacitor c15 10 m f / 50v aluminium electrolytic radial lead capacitor c13 100 pf atc 700b surface mount ceramic chip capacitor c9, c2 0.8-8.0 pf giga trim variable capacitor c8 6.2 pf atc 100b surface mount ceramic chip capacitor c7, c6, c5 ,c4 10 pf atc 100b surface mount ceramic chip capacitor c3 3 pf atc 100b surface mount ceramic chip capacitor r3 120 0-im, 2w surface mount ceramic chip capacitor r2 4.7 m ohm 1w surface mount ceramic chip capacitor r1 18 k ohm, 1w surface mount ceramic chip capacitor fb2, fb1 shield bead surface mount emi l2, l1 inductor, 5 turns air wound #22awg, id=0.059[1.49], nylon coated magnet wire pcb woven fiberglass reinforced ptfe 0.080 thk, e r=2.55, 2 oz edcu both side v in rf g g + + out rf + d + d v notes: 1. dimensions at component symbols are reference for component placement. 2. gap between ground & transmission line = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] typ. 3. dimensions of input and output component from edge of transmission lines.
5/7 SD57030-01 test circuit photomaster 4 inches 6.4 inches SD57030-01 test circuit SD57030-01
SD57030-01 6/7 controlling dimension: inches 1022729b m250 (.230 x .360 2l n/herm w/flg) mechanical data mm inch min. typ. max min. typ. max a 5.21 5.71 0.205 0.225 b 2.16 2.92 0.085 0.115 c 5.59 6.09 0.220 0.240 d 8.89 9.40 0.350 0.370 e 9.40 9.91 0.370 0.390 f 0.11 0.15 0.004 0.006 g 0.89 1.14 0.035 0.045 h 1.45 1.70 0.057 0.067 i 2.67 3.94 0.105 0.155 dim.
7/7 SD57030-01 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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